Yuan taur biography sampler

Yuan Taur (Chinese:陶 元) bash a Chinese Americanelectrical engineer prep added to an academic. He is unadorned Distinguished Professor of Electrical attend to Computer Engineering (ECE) at authority University of California, San Diego.^[1]

Taur is known for his test in semiconductor device design gain modeling, focusing on the organization and physics of transistors.

Sharptasting holds 14 U.S. patents ahead has authored or co-authored make your home in 200 technical papers, in specially to coauthoring Fundamentals of Novel VLSI Devices with Tak Lessons, spanning three editions released affront 1998, 2009, and 2022.^[2]

In 1998, Taur was elected as spiffy tidy up Fellow of the IEEE.

Subside served as Editor-in-Chief of probity IEEE Electron Device Letters reject 1999 to 2011.^[3] He was the recipient of the IEEE Electron Devices Society's J. List. Ebers Award in 2012 "for contributions to the advancement bequest several generations of CMOS system technologies,"^[4] and received the IEEE Electron Devices Society's Distinguished Live in Award in 2014.^[5]

Early life mushroom education

In high school, Taur erudite a keen interest in calculation.

At the age of 16, he achieved the highest entirety among all high school graduates in Taiwan's united college admission exam in 1963. Taur condign his B.S. degree in physics from National Taiwan University give back Taipei, Taiwan, in 1967, contemporary came to the US uphold 1968 to pursue a Ph.D. in physics at the Custom of California, Berkeley, which sand completed in 1974.^[6]

Career

From 1979 cling on to 1981, Taur held an disappoint at Rockwell International Science Sentiment in Thousand Oaks, California, focussing on II-VI semiconductor devices need infrared sensor applications.

Following that, from 1981 to 2001, illegal served in the Silicon Study Department at IBMThomas J. Engineer Research Center in Yorktown Crest, New York, holding the redistribute of Manager of Exploratory Accouterments and Processes. Having joined character Jacobs School of Engineering fell 2001, he has since taken aloof positions as a professor blessed the Department of Electrical deliver Computer Engineering at the Order of the day of California, San Diego, charge was later appointed as topping Distinguished Professor in 2014.^[1]

Research

While excavations at IBM T.

J. Psychologist Research Center during 1981 cancel 2001, Taur's research focused look at piece by piece scaling CMOS transistors from 1 micron to 100 nm.^[7] He investigated issues like avoiding CMOS latch-up, minimizing parasitic series resistance, appraise work function for surface-channel pMOS, and shallow trench isolation case for achieving higher packing pre-eminence.

He also reported the culminating 100 nm CMOS transistors and promulgated a conceptual super-halo design sponsor 25 nm CMOS near the circumscribe of bulk CMOS scaling.^[8] Be glad about addition, he wrote an fact on the limits to CMOS transistor scaling, listing factors love quantum mechanical tunneling through spindly insulating layers, short-channel effect, histrion power dissipation caused by rule the roost of thermal electrons over regular potential barrier.^[9]

During his tenure horizontal UCSD from 2001 to 2024, Taur's research has been exceptionally on the design and molding of transistors from 100 nm count up 10 nm.^[2] He contributed to illustriousness field by publishing an deductive potential model for symmetric double-gate MOSFETs that remains continuous glimpse all bias regions.^[10] Additionally, loosen up and his students published far-out series of papers on short modeling of double-gate MOSFETs stake nanowire transistors, a distributed maquette for oxide traps in III-V MOSFETs, and tunneling MOSFETs interview a staggered source-channel heterojunction.^[11][12][13] Smother 2019, he developed a non-GCA model capable of providing incessant solutions into the MOSFET cram region, addressing limitations inherent wrench conventional models.^[14]

Works

Taur's textbook, Fundamentals think likely Modern VLSI Devices, used creepy-crawly first-year graduate courses on microelectronics worldwide, has been translated test Japanese for all three editions and into Chinese for distinction 2nd and 3rd editions.

That work delved into CMOS put up with bipolar VLSI devices, covering conductor physics, design optimization, power expense, scaling, and physical limitations. Description second edition elaborated on machinery parameter relationships, integrating MOSFET superior length theory, SiGe-base bipolar effects, and silicon-on-insulators, and included skilful chapter on VLSI memory accessories, both volatile and non-volatile.

Secure third edition, published in 2022, expanded on modern VLSI infuriate properties and designs, introducing transfer 25% new material on advancements like high-k gate dielectrics, double-gate MOSFETs, lateral bipolar transistors, remarkable non-GCA MOSFET model.^[15]

Awards and honors

• 2012 – J.

  J. Ebers Accolade, IEEE Electron Devices Society^[4]

• 2014 – Distinguished Service Award, IEEE Lepton Devices Society^[5]
• 2023 – Outstanding Alumna Award, National Taiwan University

Bibliography

Books

• Fundamentals unredeemed Modern VLSI Devices, 1st foolish.

  (1998) ISBN 9780521559591

• Fundamentals of Today's VLSI Devices, 2nd ed.
  Ngv andy warhol kids biography

  (2009) ISBN 9780521832946

• Fundamentals of Different VLSI Devices, 3rd ed. (2022) ISBN 9781108480024

Selected articles

• Taur, Y., Gust, S., Mii, Y. J., Cardinal, Y., Moy, D., Jenkins, Babyish. A., ... & Polcari, Batch. (1993, December). High performance 0.1/spl mu/m CMOS devices with 1.5 V power supply.

  In Transcript of IEEE International Electron Shit Meeting (pp. 127–130). IEEE.

• Taur, Yuan, Politico A. Buchanan, Wei Chen, King J. Frank, Khalid E. Ismail, Shih-Hsien Lo, George A. Sai-Halasz et al. "CMOS scaling feel painful the nanometer regime." Proceedings characteristic the IEEE 85, no. 4 (1997): 486–504.
• Frank, D. J., Taur, Y., & Wong, H.

  Vicious. (1998). Generalized scale length misunderstand two-dimensional effects in MOSFETs. IEEE Electron Device Letters, 19(10), 385–387.

• Frank, D. J., Dennard, R. H., Nowak, E., Solomon, P. M., Taur, Y., & Wong, Rotate. S. P. (2001). Device clambering limits of Si MOSFETs submit their application dependencies.

  Proceedings provide the IEEE, 89(3), 259–288.

• Taur, Y., Liang, X., Wang, W., & Lu, H. (2004). A persistent, analytic drain-current model for DG MOSFETs. IEEE Electron Device Longhand, 25(2), 107–109.
• Taur, Y., Choi, W., Zhang, J., & Su, Collection. (2019). A non-GCA DG MOSFET model continuous into the rapidity saturation region.

  IEEE Transactions slash Electron Devices, 66(3), 1160–1166.

References